%0 Journal Article %@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S} %@nexthigherunit 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3F3T29H %@archivingpolicy denypublisher denyfinaldraft12 %@resumeid %@resumeid %@resumeid 8JMKD3MGP5W/3C9JGJ8 %@resumeid 8JMKD3MGP5W/3C9JHU3 %X Nanocrystalline diamond (NCD) was grown on the porous silicon (PS) substrate using Reticulated Vitreous Carbon (RVC) as an additional solid carbon source. RVC was produced at different heat treatment temperatures of 1300, 1500, and 2000 °C, resulting in samples with different turbostratic carbon organizations. The PS substrate was produced by an electrochemical method. NCD film was obtained by the chemical vapor infiltration/deposition process where a RVC piece was positioned just below the PS substrate. The PS and NCD samples were characterized by Field Emission Gun-Scanning Electron Microscopy (FEG-SEM). NCD films presented faceted nanograins with uniform surface texture covering all the pores resulting in an apparent micro honeycomb structure. Raman's spectra showed the D and G bands, as well as, the typical two shoulders at 1,150 and 1,490 cm−1 attributed to NCD. X-ray diffraction analyses showed the predominant (111) diamond orientation as well as the (220) and (311) peaks. The structural organization and the heteroatom presence on the RVC surface, analyzed from X-ray photoelectron spectroscopy, showed their significant influence on the NCD growth process. The hydrogen etching released, from RVC surface, associated to carbon and/or oxygen/nitrogen amounts led to different contributions for NCD growth. %8 Sept. %N 9 %T Nanodiamond infiltration into porous silicon through etching of solid carbon produced at different graphitization temperatures %@electronicmailaddress %@electronicmailaddress %@electronicmailaddress beloto@las.inpe.br %@electronicmailaddress neidenei@las.inpe.br %@secondarytype PRE PI %K Nanodiamond, Porous silicon, Chemical vapor infiltration, Reticulated vitreous carbon, Synthesis, NANOCRYSTALLINE DIAMOND FILMS, RETICULATED VITREOUS CARBON, CHEMICAL-VAPOR-DEPOSITION, HF-ACETONITRILE, GROWTH, NUCLEATION, FABRICATION, ETHANOL, SURFACE, CVI. %@usergroup administrator %@usergroup lattes %@usergroup secretaria.cpa@dir.inpe.br %@group CST-CST-INPE-MCT-BR %@group LAS-CTE-INPE-MCT-BR %@group LAS-CTE-INPE-MCT-BR %@group LAS-CTE-INPE-MCT-BR %@e-mailaddress beloto@las.inpe.br %3 miranda.pdf %@secondarymark B1_ASTRONOMIA_/_FÍSICA B1_CIÊNCIAS_BIOLÓGICAS_I B2_CIÊNCIAS_BIOLÓGICAS_III A2_ENGENHARIAS_II B2_MATERIAIS B1_QUÍMICA %F lattes: 3894119234731870 3 MirandaBaldBeloFerr:2011:NaInIn %@issn 1388-0764 %2 dpi.inpe.br/plutao/2011/09.22.16.22.35 %@affiliation Instituto Nacional de Pesquisas Espaciais (INPE) %@affiliation Instituto Nacional de Pesquisas Espaciais (INPE) %@affiliation Instituto Nacional de Pesquisas Espaciais (INPE) %@affiliation Instituto Nacional de Pesquisas Espaciais (INPE) %@project CNPq[141221/2005-4]; Fapesp[03/13454-8] %B Journal of Nanoparticle Research %@versiontype publisher %P 4219-4228 %4 dpi.inpe.br/plutao/2011/09.22.16.22 %@documentstage not transferred %D 2011 %V 13 %@doi 10.1007/s11051-011-0366-3 %O Setores de Atividade: Pesquisa e desenvolvimento científico. %A Miranda, Claudia Renata Borges, %A Baldan, M. R., %A Beloto, Antonio Fernando, %A Ferreira, Neidenêi Gomes, %@dissemination WEBSCI; PORTALCAPES; COMPENDEX. %@area FISMAT